HT Semiconductor cxt5401 free download

File name cxt5401.pdf

CXT5401 TRANSISTOR (PNP) SOT-89 FEATURE Switching and amplification in high voltage Applications such as telephony 1. BASE Low current(max. 500mA) 1 1 High voltage(max.160v) 2. COLLECTOR 2 2 3 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE = -10A, IC=0 -5 V Collector cut-off current ICBO VCB = -120 V, IE=0 -50 nA Emitter cut-off current IEBO VEB= -3V, IC=0 -50 nA hFE(1) VCE= -5V, IC=-1 mA 50 DC current gain hFE(2) VCE= -5V, IC= -10 mA 60 300 hFE(3) VCE= -5V, IC=-50 mA 50 VCE(sat) IC= -10 mA, IB= -1 mA -0.2 V Collector-emitter saturation voltage